It's now out yet but will be in 07
Intel First to Demonstrate Working 45nm Chips
Intel has produced what are believed to be the industry's first fully functional static random access memory (SRAM) chips using 45-nanometer (nm) process technology, our next-generation, high-volume semiconductor manufacturing process.
Intel® 300mm wafer with 45nm shuttle test chips.
This important milestone demonstrates that we are on track for 2007 to manufacture chips on 300mm wafers using the new 45nm (P1266) process, in accordance with Moore's Law. This accomplishment is one of the critical milestones for Intel in achieving continual improvement in performance and performance-per-watt in our platforms through advancements in our process technology.
"Being first to high-volume with 65nm process technology and the first with a working 45nm chip highlights Intel's leadership position in chip technology and manufacturing," says Bill Holt, vice president, general manager, Intel Technology and Manufacturing Group. "Intel has a long history of translating technology leaps into tangible benefits that people appreciate. Our 45nm technology will provide the foundation for delivering PCs with improved performance-per-watt that will enhance the user experience."
As of early 2006, Intel is the only company in high-volume production of semiconductors on 65nm technology, the industry's most advanced process. We have two manufacturing facilities making 65nm chips in Arizona and Oregon, and two more coming online in 2006 in Ireland and Oregon.
Increasing Transistor Density and Battery Power
Die photo of an Intel® 45nm shuttle test chip including 153 Mbit SRAM and logic test circuits.
The 45nm process enables chip circuitry with higher performance-per-watt than the most advanced processes in production today. In the future, using the 45nm process will allow us to make chips with twice as many transistors in a given area.
Intel's 45nm process technology will allow more energy efficient chips for mobile devices and increased opportunities for building smaller, more-powerful platforms. Part of the reason for this is, in comparison to the 65nm process, the new technology will provide:
About a two-fold improvement in transistor density, for either smaller chip size or increased transistor count.
More than 20 percent improvement in transistor switching speed or more than a five-fold reduction in transistor current leakage. This will benefit battery life for mobile devices, making it possible to build smaller chips, and therefore smaller, more-powerful products.
One Billion Transistors on Every SRAM Chip
Each individual 153-Mbit SRAM chip contains more than 1 billion transistors. That's 200 times the number of transistors on the Intel® Pentium® processor with MMX technology, which was launched about 10 years ago on Intel's 350nm process technology. And, the memory cell size of the new SRAM chips (0.346 square microns) is almost half the size of a 65nm cell.
Development of the fully functional 45nm SRAM is a major milestone toward bringing this process technology into volume production. Though not intended as an Intel product, the 45nm SRAM test vehicle (chip) includes all transistor and interconnect features to be used on 45nm microprocessors.
Intel® 45nm, six transistor SRAM cell.
The test vehicles are used to demonstrate technology performance, yield, and reliability prior to microprocessor product ramp. Intel's development of the SRAM chips is a key first step in the industry's march toward high-volume manufacturing of the world's most complex devices.
Intel's initial 45nm development efforts are under way at the D1D facility in Oregon. In the future, we also plan to manufacture 45nm products at Fab 32 in Arizona and Fab 28 in Israel, two high-volume fabs currently under construction.